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Deposition Gases

SK materials manufactures and sells various deposition gases used in the manufacturing of semiconductorsand display panels through continuous research and active, strategic marketing.

  • Tungsten hexafluorideWF6더보기

    Global No. 1 WF6 is used in patterning semiconductor to form metal contacts and gates.

  • MonosilaneSiH4더보기

    Korea’s first and only manufacturer and seller of monosilane (SiH4) SiH4 is used during the manufacturing process of semiconductor, display and PV, where it is employed for Si insulator film and Si anti-reflection layer deposition.

  • DisilaneSi2H6더보기

    Si2H6 is used during the manufacturing process of semiconductor, display and PV, where it is employed for Si insulator film and Si anti-reflection layer deposition.

  • DichlorosilaneSiH2Cl2더보기

    SiH2Cl2 is a gas used for nitride (SixNy) deposition.

  • MonochlorosilaneSiH3Cl더보기

    SiH3 (MCS) is a precursor material used in the manufacturing of semiconductors and display panels.

  • Trimethylsilane(3MS, SiH(CH3)3)더보기

    It is a deposition gas for the formation of an interlayer planarization insulating film (SiO2)between semiconductor metal lines and the gap filling process.

SK materials 증착가스
SK materials 증착가스
Tungsten hexafluoride
WF6
Global No. 1 WF6 is used in patterning semiconductor to form metal contacts and gates.
Monosilane
SiH4
Korea’s first and only manufacturer and seller of monosilane (SiH4) SiH4 is used during the manufacturing process of semiconductor, display and PV, where it is employed for Si insulator film and Si anti-reflection layer deposition.
Disilane
Si2H6
Si2H6 is used during the manufacturing process of semiconductor, display and PV, where it is employed for Si insulator film and Si anti-reflection layer deposition.
Dichlorosilane
SiH2Cl2
SiH2Cl2 is a gas used for nitride (SixNy) deposition.
Monochlorosilane
SiH3Cl
SiH3 (MCS) is a precursor material used in the manufacturing of semiconductors and display panels.
Trimethylsilane
(3MS,SiH(CH3)3)
It is a deposition gas for the formation of an interlayer planarization insulating film (SiO2)between semiconductor metal lines and the gap filling process.